Strain and electric field induced electronic properties of two-dimensional hybrid bilayers of transition-metal dichalcogenides

Articles you may be interested in Role of strain on electronic and mechanical response of semiconducting transition-metal dichalcogenide monolayers: An ab-initio study Electronic and thermoelectric properties of few-layer transition metal dichalcogenides Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors Appl. Performance limits of transition metal dichalcogenide (MX2) nanotube surround gate ballistic field effect transistors J. Tunability of the electronic properties of two-dimensional bilayer hetero structures of transition-Application of both strain and electric field is found to modify the band gap and carrier effective mass in the hybrid bilayers considered. The calculated results based on density functional theory suggest that the tensile strain considerably changes the band gap of semiconducting bilayers; it makes the band gap to be indirect, and later initiates the semiconductor-to-metal transition. Application of the external electric fields, on the other hand, shows asymmetric variation in the band gap leading to the closure of the gap at about 0.5–1.0 V/A ˚. Tuning of the band gap and carrier effective mass in such a controlled manner makes the hybrid bilayers of transition metal dichalco-genides to be promising candidates for application in electronic devices at nanoscale.